Room Temperature O-band DFB Laser Array Directly Grown on (001) Silicon
Room Temperature O-band DFB Laser Array Directly Grown on (001) Silicon
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DOI：
10.1021/acs.nanolett.6b04690
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发表时间：
2017-01-01
期刊：
影响因子：
10.8
通讯作者：
Van Thourhout, Dries
中科院分区：
文献类型：
--
作者：
Tian, Bin;Wang, Zhechao;Van Thourhout, Dries
最近，人们展示了几种在硅上生长III-V激光器的方法。然而，大多数器件与进一步的集成不兼容，并且依赖于厚的缓冲层，并且需要特殊的衬底。最近，我们展示了一种新的方法，使用与集成兼容的选择性生长工艺在标准的001-硅衬底上生长高质量的InP，而不需要缓冲。这里我们展示了在这些InP模板上可以生长出高质量的InGaAs层：高分辨率的透射电子显微镜分析表明这些层没有光学活性缺陷。与InP相反，InGaAs材料在与硅光电子集成电路集成相关的波长上显示出强烈的光致发光。分布反馈激光器是通过在器件的上表面刻蚀一阶光栅来定义的。实验表明，该激光器在单一波长下运行清晰，对边模有很强的抑制作用。与以前展示的InP激光器相比，阈值降低了65%。演示了线性递增、波长递增的激光阵列，证明了对工艺的控制和材料的高质量。这是在硅衬底上实现全集成光子IC的一个重要成果。
Several approaches for growing III-V lasers on silicon were recently demonstrated. Most are not compatible with further integration, however, and rely on thick buffer layers and require special substrates. Recently, we demonstrated a novel approach for growing high quality InP without buffer on standard 001-silicon substrates using a selective growth process compatible with integration. Here we show high quality InGaAs layers can be grown on these InP-templates: High-resolution TEM analysis shows these layers are free of optically active defects. Contrary to InP, the InGaAs material exhibits strong photoluminescence for wavelengths relevant for integration with silicon photonics integrated circuits. Distributed feedback lasers were defined by etching a first order grating in the top surface of the device. Clear laser operation at a single wavelength with strong suppression of side modes was demonstrated. Compared to the previously demonstrated InP lasers 65% threshold reduction is observed. Demonstration of laser arrays with linearly increasing, wavelength prove the control of the process and the high quality of the material. This is an important result toward realizing fully integrated photonic ICs on silicon substrates.