Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs
Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs
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总电离剂量对 130 nm PD SOI SRAM 的单粒子扰乱灵敏度的影响
DOI：
10.1109/tns.2017.2706287
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发表时间：
2017
影响因子：
1.8
通讯作者：
He Chengfa
中科院分区：
文献类型：
--
作者：
Zheng Qiwen;Cui Jiangwei;Liu Mengxin;Zhou Hang;Liu Mohan;Wei Ying;Su D;an;Ma Teng;Lu Wu;Yu Xuefeng;Guo Qi;He Chengfa
研究了总电离剂量（TID）对130 nm部分耗尽（PD）SOI静态随机存储器（SRAM）单粒子翻转（SEU）硬度的影响。在我们的实验中观察到了TID对130 nm PD SOI SRAM的SEU灵敏度的可测量的协同效应，即使这远小于微米和亚微米器件。此外，在TID照射后的SEU横截面不依赖于TID曝光期间施加的数据图案：SEU横截面的特征在于TID数据图案及其互补数据图案一致地减小，而不是作为微米和亚微米SRAM的优选状态和非优选状态。利用相同的SRAM存储单元布局，设计了一种可直接测量静态噪声容限（SNM）的存储单元测试结构。对存储单元SNM的直接测量表明，TID降低了存储单元两端的SNM，表明TID将增加130 nm PD SOI SRAM的单粒子翻转截面。并且，SNM的降低是由“辐射诱导的窄沟道效应”引起的存储单元晶体管的阈值漂移引起的。
Effect of total ionizing dose (TID) on single-event upset (SEU) hardness of 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memories (SRAMs) is investigated in this paper. The measurable synergistic effect of TID on SEU sensitivity of 130-nm PD SOI SRAM was observed in our experiment, even though that is far less than micrometer and submicrometer devices. Moreover, SEU cross section after TID irradiation has no dependence on the data pattern that was applied during TID exposure: SEU cross sections are characterized by TID data pattern and its complement data pattern are decreased consistently rather than a preferred state and a nonpreferred state as micrometer and sub-micrometer SRAMs. The memory cell test structure allowing direct measurement of static noise margin (SNM) under standby operation was designed using identical memory cell layout of SRAM. Direct measurement of the memory cell SNM shows that both data sides’ SNM is decreased by TID, indicating that SEU cross section of 130-nm PD SOI SRAM will be increased by TID. And, the decreased SNM is caused by threshold shift in memory cell transistors induced by “radiation-induced narrow channel effect.”