Role of O(1D) in the oxidation of Si(100)
Role of O(1D) in the oxidation of Si(100)
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O(1D) 在 Si(100) 氧化中的作用
DOI：
10.1116/1.1563254
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
Y. Ono
中科院分区：
文献类型：
--
作者：
T. Kaspar;A. C. Tuan;R. Tonkyn;W. Hess;J. W. Rogers;Y. Ono
最近已经证明，用在稀有气体等离子体中产生的中性原子氧物种氧化硅可以产生高质量的薄氧化物。据推测，原子氧在第一激发态，O（1D），是一个占主导地位的反应物种的氧化机制。在这项研究中，我们调查的作用，O（1D）在硅氧化在没有其他氧化物种。O（1D）是通过N2 O在193 nm处的激光诱导光解离产生的。我们发现，在400 °C下，O（1D）在氧化的初始阶段是有效的，但氧化物生长速率在超过1.5 nm时急剧下降。 无论氧化时间或N2 O分压（0.5-90 mTorr）如何，都没有实现厚于2 nm的氧化物膜，表明O（1D）不能是较厚快速氧化机制中的主要反应性物种。我们认为，淬火的O（1D）O（3 P）（基态）扩散过程中通过较厚的氧化物的结果在显着较慢的氧化动力学。与此相反，用真空紫外光氧化。
Oxidation of silicon with neutral atomic oxygen species generated in a rare gas plasma has recently been shown to produce high-quality thin oxides. It has been speculated that atomic oxygen in the first excited state, O(1D), is a dominant reactive species in the oxidation mechanism. In this study, we investigate the role of O(1D) in silicon oxidation in the absence of other oxidizing species. The O(1D) is generated by laser-induced photodissociation of N2O at 193 nm. We find that, at 400 °C, O(1D) is effective in the initial stages of oxidation, but the oxide growth rate decreases dramatically past 1.5 nm. Oxide films thicker than 2 nm were not achieved regardless of oxidation time or N2O partial pressure (0.5–90 mTorr), indicating O(1D) cannot be a dominant reactive species in thicker rapid oxidation mechanisms. We suggest that quenching of O(1D) to O(3P) (ground state) during diffusion through thicker oxides results in drastically slower oxidation kinetics. In contrast, oxidation with a vacuum ultraviol...