Selective-area growth of hexagonal nanopillars with single InGaAs/GaAs quantum wells on GaAs(111)B substrate and their temperature-dependent photoluminescence
Selective-area growth of hexagonal nanopillars with single InGaAs/GaAs quantum wells on GaAs(111)B substrate and their temperature-dependent photoluminescence
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DOI：
10.1088/0957-4484/18/10/105302
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发表时间：
2007-03
期刊：
影响因子：
3.5
通讯作者：
Lin Yang;J. Motohisa;J. Takeda;K. Tomioka;T. Fukui
中科院分区：
文献类型：
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作者：
Lin Yang;J. Motohisa;J. Takeda;K. Tomioka;T. Fukui
报道了用选择区域金属有机物气相外延法在GaAs（111）B衬底上制备具有InGaAs/GaAs单量子威尔斯（QW）结构的高度均匀的六角纳米柱。所制备的单量子阱InGaAs/GaAs纳米柱的尺寸标准偏差约为2%，高度标准偏差约为5%。随着温度的降低，峰位向短波长移动，峰强度增大，峰宽减小。考虑应变效应和压电效应的有限方势阱模型计算的阱宽小于由生长速率和生长时间确定的值，这主要是由于铟的偏析及其并入随后在较高温度下生长的GaAs层。
We report on the fabrication of highly uniform hexagonal nanopillars with single InGaAs/GaAs quantum wells (QW) on GaAs(111)B substrate by selective-area metal–organic vapour phase epitaxy. The standard size deviation of the fabricated nanopillars with single InGaAs/GaAs QW is about 2% and the standard deviation in their height about 5%. With a decrease in temperature, the peak position shifts to shorter wavelength, the peak intensity increases and the peak width decreases. The calculated well width based on the finite square potential well model taking account of the strain effect and the piezoelectric effect is smaller than the value determined from the growth rate and the growth time, which is mainly due to indium segregation and its incorporation into the subsequent GaAs layer grown at the higher temperature.