Testing the Temperature Limits of GaN-Based HEMT Devices
Testing the Temperature Limits of GaN-Based HEMT Devices
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DOI：
10.1109/tdmr.2010.2072507
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发表时间：
2010-12-01
影响因子：
2
通讯作者：
Kohn, Erhard
中科院分区：
文献类型：
--
作者：
Maier, David;Alomari, Mohammed;Kohn, Erhard
采用阶梯式温度测试方法对AlGaN/GaN和晶格匹配的InAlN/GaN异质结FET在大信号工作条件下的高温稳定性进行了评价。虽然AlGaN/GaN高电子迁移率晶体管(HEMT)在500℃的工作温度范围内已经失效，但InAlN/GaN高电子迁移率晶体管已经在900℃下(在真空中)工作了50h。失效被认为仍然与接触金属化稳定性有关，这表明InAlN/GaN异质结构配置非常健壮。
The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500 degrees C, InAlN/GaN HEMTs have been operated up to 900 degrees C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.