Relationship between morphological features of the growth interface and growth conditions in heavily-impurity doped Si and Ge crystal growth
Relationship between morphological features of the growth interface and growth conditions in heavily-impurity doped Si and Ge crystal growth
复制标题
高掺杂Si、Ge晶体生长界面形貌特征与生长条件的关系
DOI：
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复制
发表时间：
2009
期刊：
影响因子：
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通讯作者：
I. Yonenaga
中科院分区：
文献类型：
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作者：
T. Taishi;Y. Ohno;I. Yonenaga
