H2O- and O3-Based Atomic Layer Deposition of High-κ Dielectric Films on GeO2 Passivation Layers
H2O- and O3-Based Atomic Layer Deposition of High-κ Dielectric Films on GeO2 Passivation Layers
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DOI：
10.1149/1.3200902
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发表时间：
2009-01-01
影响因子：
3.9
通讯作者：
Meuris, M.
中科院分区：
文献类型：
--
作者：
Delabie, A.;Alian, A.;Meuris, M.
原子层沉积（ALD）被认为是用于在诸如锗的敏感表面上沉积纳米颗粒的使能技术。适当控制Ge和高k层之间的界面层对于获得Ge基金属氧化物半导体器件的良好性能是至关重要的。在这项工作中，我们比较O-3-和H2O为基础的ALD的HfO 2和Al 2 O3，并报告的厚度和电气质量的GeO 2钝化层。界面层的厚度取决于所使用的氧化剂，并影响界面态密度。一个小的。对于所有ALD工艺条件，都观察到GeO 2/高kappa界面处的混合程度。通过在300 ℃下在合成气体（H-2/N-2）中退火Pt栅电容器，可以显著降低界面态密度。退火后，界面态密度变得几乎独立的GeO 2钝化层的厚度。(C)2009年电化学学会。[DOI：10.1149/1.3200902]保留所有权利。
Atomic layer deposition (ALD) is considered an enabling technique for the deposition of dielectrics on sensitive surfaces such as germanium. Proper control of the interfacial layer between Ge and the high-kappa layer has been shown to be crucial for obtaining good performance of Ge-based metal-oxide-semiconductor devices. In this work, we compare O-3- and H2O-based ALD of HfO2 and Al2O3, and report on the thickness and electrical quality of GeO2 passivation layers. The thickness of the interfacial layer depends on the oxidant used and affects the interface state density. A small. degree of intermixing at the GeO2/high-kappa interface is observed for all ALD process conditions. The interface state density can be significantly reduced by annealing the Pt-gated capacitors in forming gas (H-2/N-2) at 300 degrees C. After annealing, the interface state density becomes almost independent of the thickness of the GeO2 passivation layer. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3200902] All rights reserved.