Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films
Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films
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氢化微晶立方碳化硅薄膜的低温（320°C）沉积
DOI：
10.4028/www.scientific.net/msf.457-460.317
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
M. Konagai
中科院分区：
文献类型：
--
作者：
S. Miyajima;A. Yamada;M. Konagai
采用热丝化学气相沉积（HWCVD）技术，实现了氢化微晶立方碳化硅（μc-3C-SiC:H）薄膜的低温（<320℃）沉积。以单甲基硅烷（SiH3CH3）和氢气（H2）为反应物。x射线衍射结果表明，在高氢稀释条件下（H2/SiH3CH3=125）， μc-SiC薄膜成功地沉积在康宁7059玻璃和Si（100）衬底上。在红外吸收光谱中观察到Si-Hn的伸缩振动，表明μc-SiC薄膜被氢化。光吸收光谱测定薄膜的带隙约为2.2 eV。对应3C-SiC。这些结果表明，HWCVD是低温沉积μc-3C-SiC:H薄膜的理想材料之一。
Low temperature (<320 o C) deposition of hydrogenated microcrystalline cubic silicon carbide (μc-3C-SiC:H) thin films was realized by using hot wire chemical vapor deposition (HWCVD). Monomethylsilane (SiH3CH3) and hydrogen (H2) were used as reactant gases. Under high hydrogen dilution conditions (H2/SiH3CH3=125), μc-SiC films were successfully deposited on Corning 7059 glass and Si (100) substrates, as evidenced by X-ray diffraction studies. Si-Hn stretching vibration was observed in infrared absorption spectra of the films, indicating that the μc-SiC films were hydrogenated. Bandgap of the films determined by optical absorption spectra is about 2.2 eV. This value is corresponding to 3C-SiC. These results indicated that HWCVD is one of the promising candidates for low temperature deposition of μc-3C-SiC:H thin films.