Atomic layer deposition of hafnium and zirconium silicate thin films
Atomic layer deposition of hafnium and zirconium silicate thin films
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硅酸铪和硅酸锆薄膜的原子层沉积
DOI：
10.1016/s0927-0256(02)00426-3
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
M. Tuominen
中科院分区：
文献类型：
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作者：
E. Vainonen;E. Tois;T. Ahlgren;L. Khriachtchev;J. Marles;S. Haukka;M. Tuominen
原子层沉积（ALD）技术已被用于沉积不同类型的硅酸铪和硅酸锆。由于原子/分子的逐层生长机制，该技术可以控制材料的厚度和质量。薄膜沉积在200 mm Si（100）衬底上。厚度、Hf/Si和Zr/Si比值均有变化。采用卢瑟福后向散射光谱法和飞行时间弹性后坐力检测分析确定了膜的成分和杂质分布。采用椭偏光谱法测量了涂层的厚度和折射率。我们的测量表明，在hf -硅酸盐薄膜中存在光致发光现象。
The atomic layer deposition (ALD) technique has been used to deposit different types of hafnium and zirconium silicates. The technique allows controlling the material thickness and quality due to atomic/molecular layer-by-layer growth mechanism. The films were deposited on 200 mm Si(100) substrates. Both thickness and Hf/Si or Zr/Si ratio were varied. Rutherford backscattering spectrometry and time-of-flight elastic recoil detection analysis were used to determine film composition and impurities distribution. Thickness and refractive index of the coatings were measured by spectroscopic ellipsometry. Our measurements showed the presence of photoluminescence in the Hf-silicate films.