Engineering a topological phase transition in β-InSe via strain
Engineering a topological phase transition in β-InSe via strain
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DOI：
10.1088/1367-2630/15/7/073008
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发表时间：
2013-07-02
影响因子：
3.3
通讯作者：
Huang, Baibiao
中科院分区：
文献类型：
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作者：
Ma, Yandong;Dai, Ying;Huang, Baibiao
我们报告，β-InSe赋予外部应变实现了一个新的三维拓扑绝缘体（TI）的从头计算。我们预测，有前途的拓扑非平凡的状态，可以观察到在一个可访问的温度制度在β-InSe的大自旋轨道带隙高达121 meV。具体而言，与使用具有强自旋轨道耦合（SOC）的重元素诱导TI中的带反转（BI）的先前文献不同，我们提供了仅通过机械变形稳定BI的显著蓝图，使得β-InSe即使不考虑SOC也可以显示BI。SOC仍然需要通过打破反转带的不相容对称性来在交叉点处产生带隙。
We report that beta-InSe endowed with external strain realizes a novel three dimensional topological insulator (TI) by ab initio calculations. We predicate that the promising topological non-trivial state can be observed in an accessible temperature regime in beta-InSe for its large spin-orbital band gap up to 121 meV. Specifically, unlike in previous literature where the band inversion (BI) in TIs is induced using heavy elements that have strong spin-orbital coupling (SOC), we provide a remarkable blueprint for stabilizing BI solely by mechanical deformation so that beta-InSe could display BI even without considering SOC. Nevertheless, SOC is still needed to create a band gap at the crossing point by breaking the incompatibility symmetry of the inverted bands.X