Three-dimensional high-resolution quantitative microscopy of extended crystals
Three-dimensional high-resolution quantitative microscopy of extended crystals
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DOI：
10.1038/ncomms1569
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发表时间：
2011-11-01
影响因子：
16.6
通讯作者：
Chamard, V.
中科院分区：
文献类型：
--
作者：
Godard, P.;Carbone, G.;Chamard, V.
硬X射线无透镜显微镜提高了非侵入性定量成像的希望，能够实现纳米科学的极端分辨率要求。然而，第三代同步辐射光源的部分相干性所施加的限制将样品尺寸限制在微米范围内。最近，X射线重叠关联成像已经被证明是一种任意扩展视场而不降低分辨率的解决方案。在这里，我们表明，重叠关联，应用在布拉格几何，打开新的视角，晶体成像。的三维布拉格峰强度的空间依赖性映射和整个数据随后与布拉格适应相位检索重叠关联算法反转。我们报告从一个扩展的晶体样品，从绝缘体上的硅衬底纳米结构的图像。检索的可能性，没有横向尺寸的限制，高分辨率的三维密度和位移场将允许前所未有的调查各种各样的晶体材料，从生命科学到微电子学。
Hard X-ray lens-less microscopy raises hopes for a non-invasive quantitative imaging, capable of achieving the extreme resolving power demands of nanoscience. However, a limit imposed by the partial coherence of third generation synchrotron sources restricts the sample size to the micrometer range. Recently, X-ray ptychography has been demonstrated as a solution for arbitrarily extending the field of view without degrading the resolution. Here we show that ptychography, applied in the Bragg geometry, opens new perspectives for crystalline imaging. The spatial dependence of the three-dimensional Bragg peak intensity is mapped and the entire data subsequently inverted with a Bragg-adapted phase retrieval ptychographical algorithm. We report on the image obtained from an extended crystalline sample, nanostructured from a silicon-on-insulator substrate. The possibility to retrieve, without transverse size restriction, the highly resolved three-dimensional density and displacement field will allow for the unprecedented investigation of a wide variety of crystalline materials, ranging from life science to microelectronics.