Dominant factors and their action mechanisms on material removal rate in electrochemical mechanical polishing of 4H-SiC (0001) surface
Dominant factors and their action mechanisms on material removal rate in electrochemical mechanical polishing of 4H-SiC (0001) surface
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DOI：
10.1016/j.apsusc.2021.150130
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发表时间：
2021-10
影响因子：
6.7
通讯作者：
Xiaozhe Yang;Xu Yang;K. Kawai;Kenta Arima;K. Yamamura
中科院分区：
文献类型：
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作者：
Xiaozhe Yang;Xu Yang;K. Kawai;Kenta Arima;K. Yamamura
无浆料电化学机械抛光（ECMP）是一种高效的SiC晶片无损伤抛光技术。为了提高电化学机械抛光的材料去除率，有必要更好地了解SiC的阳极氧化机理，以获得更高的阳极氧化速率。在这项研究中，我们研究了电解液温度，表面损伤，掺杂浓度和应变对SiC阳极氧化速率的影响。这些因素对SiC的阳极氧化都有促进作用。通过拉曼光谱分析发现，加工损伤和掺杂对SiC阳极氧化的促进作用主要是由SiC表面的加工残余应变和掺杂应变引起的。采用应变可控阳极氧化装置，定量研究了SiC表面的阳极氧化速率与应变的关系。压应变和拉应变均能提高SiC的阳极氧化速率。通过导电原子力显微镜观察，研究了应变对SiC阳极氧化的促进机理。该研究对提高ECMP的效率具有重要的指导意义，并将有助于ECMP的实际应用。
Slurryless electrochemical mechanical polishing (ECMP) has been confirmed as a highly efficient damage-free polishing technique for SiC wafers. To increase the material removal rate of ECMP, it is essential to have a better understanding of the anodic oxidation mechanism of SiC to obtain a much higher anodic oxidation rate. In this study, we investigated the effects of electrolyte temperature, surface damage, doping concentration, and strain on the anodic oxidation rate of SiC. All these factors were found have a promotional effect on the anodic oxidation of SiC. The promotional effects of processing-induced damage and doping on SiC anodic oxidation were attributed to the processing-induced residual strain and doping-induced strain on the SiC surface, which were observed by Raman spectroscopy. The relationship between anodic oxidation rate and strain on the SiC surface was quantitatively investigated by applying a strain-controllable anodic oxidation device. Both compressive and tensile strains were found to increase the anodic oxidation rate of SiC. The promotion mechanism of the strain on the anodic oxidation of SiC was studied by conductive atomic force microscopy observations. This study is expected to be an important guide for improving the efficiency of ECMP and will contribute to the practical application of ECMP.