Interference-enhanced deep-ultraviolet Raman signal of hexagonal boron nitride flake and its underlying silicon substrate
Interference-enhanced deep-ultraviolet Raman signal of hexagonal boron nitride flake and its underlying silicon substrate
复制标题
六方氮化硼薄片及其底层硅衬底的干涉增强深紫外拉曼信号
DOI：
10.1002/jrs.6228
复制
发表时间：
2021
影响因子：
2.5
通讯作者：
Ping-Heng Tan
中科院分区：
文献类型：
--
作者：
Tao Liu;Miao-Lin Lin;Yu-Chen Leng;Xin Cong;Xin Zhang;Ping-Heng Tan
我们以SiO /Si衬底上剥离的六方氮化硼（hBN）薄片为原型，演示了如何在深紫外（DUV）激光激发下增强来自超薄层状材料和底层不透明衬底的拉曼信号。我们发现，在266 nm激发下，hBN/SiO /Si多层结构中的干涉效应可以极大地增强hBN薄片和Si衬底的拉曼强度。这种增强效果比可见光激励下的增强效果更显著。随着衬底中SiO层厚度的增加，相应的hBN和Si拉曼强度在266 nm激发下分别变化高达4和2个数量级。该方法可以通过调整SiO /Si衬底中SiO层的厚度来增强其他二维材料在DUV激发下的拉曼信号。
We take hexagonal boron nitride (hBN) flakes exfoliated on SiO /Si substrates as a prototype, to demonstrate how to enhance the Raman signals both from ultra‐thin layered materials and the underlying opaque substrate excited by deep ultraviolet (DUV) laser. We found that the interference effect in the hBN/SiO /Si multilayered structure can largely enhance Raman intensity of hBN flake and the underlying Si substrate under 266‐nm excitation. This enhancement effect is more significant than that under visible excitation. With increasing the thickness of SiO layer in the substrate, the corresponding hBN and Si Raman intensity can vary by up to ∼ 4 and ∼2 orders of magnitude under 266‐nm excitation, respectively. This method can be applicable to enhance Raman signal from other two‐dimensional materials under DUV excitation by tuning the thickness of SiO layer in the SiO /Si substrate.