Electrical and Optical Properties of the II–V Compounds
Electrical and Optical Properties of the II–V Compounds
复制标题
II-V族化合物的电学和光学性质
DOI：
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发表时间：
1961
期刊：
影响因子：
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通讯作者：
W. E. Reese
中科院分区：
文献类型：
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作者：
W. Turner;A. Fischler;W. E. Reese
非立方II-V族半导体最近已被一些工作者研究。将对目前的情况进行审查。这些材料的能隙范围从0.13到超过1电子伏。室温迁移率为10- 15000 cm 2/v sec。已经报道了几种化合物的电学和光学性质的各向异性。对于CdAs 2，已经可以通过一个简单的能带模型来解释霍尔迁移率的各向异性。
The noncubic II–V semiconductors have been studied recently by several workers. A review will be given of the present situation. The energy gaps of these materials range from 0.13 to over 1 ev. Room temperature mobilities of 10–15 000 cm2/v sec have been observed. Anisotropy of electrical and optical properties have been reported for several of the compounds. For CdAs2 it has been possible to explain the anisotropy of Hall mobility by a simple energy band model.