Surface-initiated atom transfer radical polymerization of polyhedral oligomeric silsesquioxane (POSS) methacrylate from flat silicon wafer
Surface-initiated atom transfer radical polymerization of polyhedral oligomeric silsesquioxane (POSS) methacrylate from flat silicon wafer
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DOI：
10.1016/j.polymer.2005.12.025
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发表时间：
2006-02
期刊：
影响因子：
4.6
通讯作者：
Renxun Chen;W. Feng;Shiping Zhu;G. Botton;B. Ong;Yiliang Wu
中科院分区：
文献类型：
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作者：
Renxun Chen;W. Feng;Shiping Zhu;G. Botton;B. Ong;Yiliang Wu
采用表面引发原子转移自由基聚合（ATRP）技术，从平面硅片上直接接枝了3-（3,5,7,9,11,13,15-庚环氯戊基-五环[9.5.1.1.3,91.5,1517,13]-辛硅氧烷-1-基）甲基丙烯酸丙酯（POSS- ma）。采用两种方法来提高体系活性和控制聚合物分子量。通过“添加自由引发剂”的方法，观察了接枝聚合物（POSS-MA）层厚度与单体转化率之间的线性关系。通过“添加失活剂”的方法，poly（POSS-MA）的厚度随反应时间线性增加。得到了厚度达40nm的Poly（POSS-MA）层。x射线光电子能谱（XPS）测定的化学成分与理论值吻合较好。水接触角测量表明，接枝聚POSS-MA具有极强的疏水性。用原子力显微镜（AFM）研究了接枝聚合物层的表面形貌。
A polyhedral oligomeric silsesquioxane (POSS) methacrylate monomer, i.e. 3-(3,5,7,9,11,13,15-heptacyclopentyl-pentacyclo [9.5.1.1.3,91.5,1517,13]-octasiloxane-1-yl) propyl methacrylate (POSS-MA), was directly grafted from flat silicon wafers using surface-initiated atom transfer radical polymerization (ATRP). Two methods were used to improve the system livingness and control of polymer molecular weights. By ‘adding free initiator’ method, a linear relationship between the grafted poly(POSS-MA) layer thickness and monomer conversion was observed. By ‘adding deactivator’ method, the poly(POSS-MA) thickness increased linearly with reaction time. Poly(POSS-MA) layers up to 40nm were obtained. The chemical compositions measured by X-ray photoelectron spectroscopy (XPS) agreed well with their theoretical values. Water contact angle measurements revealed that the grafted poly(POSS-MA) was extremely hydrophobic. The surface morphologies of the grafted polymer layers were studied by an atom force microscopy (AFM).