75% inverse magnetoresistance at room temperature in Fe4N/MgO/CoFeB magnetic tunnel junctions fabricated on Cu underlayer
75% inverse magnetoresistance at room temperature in Fe4N/MgO/CoFeB magnetic tunnel junctions fabricated on Cu underlayer
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DOI：
10.1063/1.3072827
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发表时间：
2009-04-01
影响因子：
3.2
通讯作者：
Takahashi, Migaku
中科院分区：
文献类型：
--
作者：
Komasaki, Yosuke;Tsunoda, Masakiyo;Takahashi, Migaku
通过采用扩散阻挡层，在裸硅片上获得了具有耐热性的伪单晶铜底层（UL）。 Cu UL 上制作的 Fe4N 层具有外延关系且晶粒直径较大。 Fe4N/MgO/CoFeB 堆叠序列中的磁隧道结在室温下表现出逆隧道磁阻 (TMR) 效应。 TMR 比率的最大幅度为 -75.1%，是在偏置电压 V-b = -250 mV 时获得的，此时电子从 CoFeB 流向 Fe4N。大的TMR倒数是由于Fe4N和Cu之间的晶格失配小而提高了Fe4N薄膜的结晶度。 (C) 2009 年美国物理研究所。 [DOI：10.1063/1.3072827]
Pseudo-single-crystal Cu underlayer (UL) with thermal tolerance was obtained on bare Si wafer by employing a diffusion-blocking layer. Fe4N layer fabricated on the Cu UL has an epitaxial relationship and a large grain diameter. Magnetic tunnel junctions in a stacking sequence of Fe4N/MgO/CoFeB exhibited an inverse tunnel magnetoresistance (TMR) effect at room temperature. The largest magnitude of the TMR ratio, -75.1%, was obtained at bias voltage V-b = -250 mV, where electrons flow from CoFeB to Fe4N. The large inverse TMR ratio is due to the improvement of the crystallinity of the Fe4N film because of the small lattice misfit between Fe4N and Cu. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3072827]