Characterization and modeling of metal-insulator transition (MIT) based tunnel junctions
Characterization and modeling of metal-insulator transition (MIT) based tunnel junctions
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基于金属-绝缘体转变 (MIT) 的隧道结的表征和建模
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
S. Datta
中科院分区：
文献类型：
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作者：
E. Freeman;A. Kar;N. Shukla;R. Misra;R. Engel;D. Schlom;V. Gopalan;K. Rabe;S. Datta
持续的物理缩放将主要通过减小器件电容来降低功耗；然而，如果CMOS FET可以被一个在非常低的电源电压下工作的全新器件方案所取代，将会产生更大的好处。最近，基于半导体的带间隧道场效应晶体管（ttfet）由于其具有实现亚kBT/q陡开关振荡的潜力而得到了探索，从而实现了低电压工作。在这项工作中，我们探索了基于二氧化钒（VO2）隧道结的金属到绝缘体的突然转变（MIT），这是迈向基于相关电子的陡峭开关ttfet的第一步。如图所示，具有强电子相关性的材料中的金属绝缘体跃迁MIT可以通过在关闭状态下打开费米能级周围的能隙来调制隧穿电流，并且可以通过在打开状态下压缩间隙来调制金属-绝缘体-金属隧穿电流。
Continued physical scaling will reduce power dissipation primarily through the reduction in device capacitance; however, a far greater benefit would result if the CMOS FET could be replaced by a fundamentally new device scheme that operates under very low supply voltages. Recently, semiconductor based inter-band tunnel field effect transistors (TFET) have been explored due to their potential to achieve sub kBT/q steep switching swings, enabling low voltage operation. In this work, we explore the abrupt metal to insulator transition (MIT) of vanadium dioxide (VO2) based tunnel junction - a first step towards a correlated electron based steep switching TFET. As illustrated, the metal insulator transition MIT in materials with strong electron correlation can be utilized to modulate the tunnelling current by opening an energy gap around the Fermi level in the OFF-state, and a metal-insulator-metal tunnelling current by collapsing the gap in the ON-state.