Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature
Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature
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DOI：
10.1021/acs.nanolett.7b05015
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发表时间：
2018-04-01
期刊：
影响因子：
10.8
通讯作者：
Weman, Helge
中科院分区：
文献类型：
--
作者：
Ren, Dingding;Ahtapodov, Lyubomir;Weman, Helge
半导体纳米线激光器可以产生具有小型化几何结构的导相干光发射，为纳米光子电路、光学传感、芯片上和芯片间光通信等各种应用带来了新的可能性。在这里，我们报道了利用一种新颖的以GaAsSb为基础的多轴超晶格作为增益介质的单纳米线设计，在光泵浦下实现了从890到990 nm的单模和室温激光。通过成分调谐控制激光波长，具有优异的室温激光性能，这是由于独特的纳米线结构和高效的增益材料，提供了接近6kW/cm(75µJ/cm(2)/脉冲)的低激光阈值，高达1250的激光品质因数和类似于129K的高特征温度。这些结果为设计和合成纳米线激光结构提供了重大进展，为未来性能优越的纳米级集成光电系统铺平了道路。
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode and room-temperature lasing from 890 to 990 nm, utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as a gain medium under optical pumping. The control of lasing wavelength via compositional tuning with excellent room-temperature lasing performance is shown to result from the unique nanowire structure with efficient gain material, which delivers a low lasing threshold of similar to 6 kW/cm(2) (75 mu J/cm(2) per pulse), a lasing quality factor as high as 1250, and a high characteristic temperature of similar to 129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way toward future nanoscale integrated optoelectronic systems with superior performance.