Piezoelectric control of the mobility of a domain wall driven by adiabatic and non-adiabatic torques
Piezoelectric control of the mobility of a domain wall driven by adiabatic and non-adiabatic torques
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DOI：
10.1038/nmat3657
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发表时间：
2013-09-01
期刊：
影响因子：
41.2
通讯作者：
Wunderlich, J.
中科院分区：
文献类型：
--
作者：
De Ranieri, E.;Roy, P. E.;Wunderlich, J.
磁畴壁丰富的内部自由度使其成为探索信息存储、传输和处理的新概念的电子电荷的有吸引力的补充。在这里，我们使用垂直磁化的GaMnAsP/GaAs铁磁半导体中的磁畴壁的可调内部结构，并展示了压电控制的磁各向异性对电流驱动的磁畴壁产生高达500%的迁移率变化的器件。我们在很宽的电流脉冲幅度范围内观察到了电流诱导的磁畴壁运动，并报道了将两个迁移率不同的区域分开的Walker击穿的直接观察和压电控制。我们的工作表明，在自旋轨道耦合的铁磁体中，如果存在弱的非本征磁区壁钉扎，压电控制可以在实验上估计电流驱动磁区运动中绝热和非绝热自旋转移扭矩特征比的上下界。
The rich internal degrees of freedom of magnetic domain walls make them an attractive complement to electron charge for exploring new concepts of storage, transport and processing of information. Here we use the tunable internal structure of a domain wall in a perpendicularly magnetized GaMnAsP/GaAs ferromagnetic semiconductor and demonstrate devices in which piezoelectrically controlled magnetic anisotropy yields up to 500% mobility variations for an electrical-current-driven domain wall. We observe current-induced domain wall motion over a wide range of current-pulse amplitudes and report a direct observation and the piezoelectric control of the Walker breakdown separating two regimes with different mobilities. Our work demonstrates that in spin-orbit-coupled ferromagnets with weak extrinsic domain wall pinning, the piezoelectric control allows one to experimentally assess the upper and lower boundaries of the characteristic ratio of adiabatic and non-adiabatic spin-transfer torques in the current-driven domain wall motion.