Electrical control of spin relaxation in a quantum dot
Electrical control of spin relaxation in a quantum dot
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DOI：
10.1103/physrevlett.100.046803
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发表时间：
2008-02-01
影响因子：
8.6
通讯作者：
Gossard, A. C.
中科院分区：
文献类型：
--
作者：
Amasha, S.;MacLean, K.;Gossard, A. C.
我们证明了电子自旋弛豫时间T-1之间的塞曼分裂自旋态的横向量子点。我们发现弛豫是由自旋-轨道相互作用介导的，并且通过使用栅极电压操纵点的轨道状态，我们改变了相当于T-1（-1）的弛豫速率W超过一个数量级。W对轨道限制的依赖性与理论预测一致，并且从这些数据中我们提取了自旋轨道长度。我们还测量了W对磁场的依赖性，并表明自旋轨道介导的耦合到声子是占主导地位的弛豫机制下降到1 T，其中T-1超过1 s。
We demonstrate electrical control of the spin relaxation time T-1 between Zeeman-split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the orbital states of the dot using gate voltages we vary the relaxation rate W equivalent to T-1(-1) by over an order of magnitude. The dependence of W on orbital confinement agrees with theoretical predictions, and from these data we extract the spin-orbit length. We also measure the dependence of W on the magnetic field and demonstrate that spin-orbit mediated coupling to phonons is the dominant relaxation mechanism down to 1 T, where T-1 exceeds 1 s.