Gating electrical transport through DNA molecules that bridge between silicon nanogaps.
Gating electrical transport through DNA molecules that bridge between silicon nanogaps.
复制标题
通过桥接硅纳米间隙的 DNA 分子来控制电传输。
DOI：
10.1039/c2nr12106a
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发表时间：
2012
期刊：
影响因子：
6.7
通讯作者：
K. Yamana
中科院分区：
文献类型：
--
作者：
S. Takagi;T. Takada;N. Matsuo;S. Yokoyama;Mitsunobu Nakamura;K. Yamana
在硅基三端电极上制备了DNA电子器件。 DNA 分子（400 bp 长，混合序列）的两端通过源极-漏极纳米间隙（120 nm）电极之间的化学键桥接。获得了S形I-V曲线，并且可以通过栅极电压来调制电流。 DNA 分子在三端装置中充当半导体 p 型纳米线。
DNA electronic devices were prepared on silicon-based three-terminal electrodes. Both ends of DNA molecules (400 bp long, mixed sequences) were bridged via chemical bonds between the source-drain nanogap (120 nm) electrodes. S-Shaped I-V curves were obtained and the electric current can be modulated by the gate voltage. The DNA molecules act as semiconducting p-type nanowires in the three-terminal device.
影响因子：
56.9
作者：
MURPHY, CJ;ARKIN, MR;BARTON, JK
通讯作者：
BARTON, JK
影响因子：
62.1
作者：
Genereux JC;Barton JK
通讯作者：
Barton JK