The effect of Ga3+ addition on the sinterability and microwave dielectric properties of RE3Al5O12 (Tb3+, Y3+, Er3+ and Yb3+) garnet ceramics
The effect of Ga3+ addition on the sinterability and microwave dielectric properties of RE3Al5O12 (Tb3+, Y3+, Er3+ and Yb3+) garnet ceramics
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DOI：
10.1016/j.ceramint.2013.08.097
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发表时间：
2014-04
影响因子：
5.2
通讯作者：
Annrose Sunny;Varsha Viswanath;K. P. Surendran;M. Sebastian
中科院分区：
文献类型：
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作者：
Annrose Sunny;Varsha Viswanath;K. P. Surendran;M. Sebastian
采用混合氧化物法制备了RE 3Al 5 O 12（RE=Tb、Y、Er、Yb）陶瓷，研究了Ga 3+掺杂对其性能的影响。本征Y3 Al 5 O 12（YAG）陶瓷在1650 °C下烧结4 h后表现出良好的介电性能（εr= 10.1，Qu ×f= 65，000 GHz，τf=−45 ppm/°C）。添加Ga_2 O_3有利于提高Tb_3Al_5 O_（12）、Er_3Al_5 O_（12）和Yb_3Al_5 O_（12）的致密化，但Y_3Al_5 O_（12）中添加Nb_2 O_5效果较好。在添加Ga 3+的样品中，Yb 3Al 5 O 12 + 1wt%Ga2O3样品表现出良好的微波介电性能：εr= 10.3，Qu ×f= 50，000 GHz，τf=−58 ppm/°C。掺杂1wt%Nb2O5的Y3 Al 5 O 12的εr= 10.7，Qu ×f= 120，000 GHz，τf=−45 ppm/°C。陶瓷具有良好的热性能（CTE=2-3 ppm/°C，λ=2-12 W/m K）。
The RE3Al5O12(RE=Tb, Y, Er, Yb) ceramics have been prepared by the mixed oxide route and the influence of Ga3+doping on their properties is investigated. The intrinsic Y3Al5O12(YAG) ceramic sintered at 1650 °C for 4 h showed good dielectric properties; (εr=10.1,Qu×f=65,000 GHz,τf=−45 ppm/°C). Addition of Ga2O3was found to be beneficial in improving the densification of Tb3Al5O12, Er3Al5O12and Yb3Al5O12except Y3Al5O12where Nb2O5is the better choice. Among Ga3+added samples, the composition Yb3Al5O12+1 wt% Ga2O3showed good microwave dielectric properties:εr=10.3,Qu×f=50,000 GHz,τf=−58 ppm/°C. The Y3Al5O12doped with 1 wt% Nb2O5hasεr=10.7,Qu×f=120,000 GHz andτf=−45 ppm/°C. The ceramics have good thermal properties (CTE=2–3 ppm/°C,λ=2–12 W/m K).