Classical linear magnetoresistance in epitaxial graphene on SiC
Classical linear magnetoresistance in epitaxial graphene on SiC
复制标题
DOI：
10.1063/1.4901175
复制
发表时间：
2014-11
影响因子：
4
通讯作者：
W. Wang;K. Gao;Zhi-Qing Li;T. Lin;J. Li;Cui Yu;Zhihong Feng
中科院分区：
文献类型：
--
作者：
W. Wang;K. Gao;Zhi-Qing Li;T. Lin;J. Li;Cui Yu;Zhihong Feng
我们研究了生长在碳化硅衬底上的单层石墨烯的磁输运性质。在低磁场下，观察到抛物线磁阻。然而，随着磁场的增加，这种抛物线磁流变体转变为线性的磁场依赖关系，在9 T以下的磁场不会出现饱和现象。在固定的磁场下，线性磁流变值随温度的升高而减小，在室温下，9 T下的线性磁流变值最大可达80%。此外，当样品在390 K下氦气气氛下热处理时，霍尔迁移率被抑制，这种抑制导致观察到的线性MR的下降。线性MR的下降与霍尔迁移率呈线性关系，这表明单层石墨烯的应用。我们将观察到的线性磁流变归因于经典起源，因为磁流变与霍尔迁移率之间有着密切的关系。
We study the magnetotransport properties of monolayer graphene grown on SiC substrates. At low magnetic fields, a parabolic magnetoresistance (MR) is observed. With increasing magnetic field, however, this parabolic MR is changed to a linear field dependence that does not show signs of saturation for magnetic fields up to 9 T. At a fixed field, the value of the linear MR decreases with increasing temperature, with its value as large as 80% under 9 T at room temperature. Furthermore, the Hall mobility is found to be suppressed when the sample is annealed at 390 K under a helium atmosphere, with this suppression causing a decrease of the observed linear MR. The decrease in the linear MR shows a linear dependence on Hall mobility, which is indicative of the application of the monolayer graphene. We attribute the observed linear MR to a classical origin owing to the close relation between the MR and Hall mobility.