Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various VGS Biases
Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various VGS Biases
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DOI：
10.1109/jestpe.2020.3028094
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发表时间：
2021-10-01
影响因子：
5.5
通讯作者：
Sheng, Kuang
中科院分区：
文献类型：
--
作者：
Zhu, Zhengyun;Xu, Hongyi;Sheng, Kuang
在这项工作中，在各种栅源偏置 (V-GS) 下对 SiC 非对称沟槽 MOSFET (DUT A) 和 SiC 双沟槽 MOSFET (DUT B) 进行了第三象限 I-V 表征和浪涌电流测试。研究发现，DUT A 的浪涌能力不受 V-GS 的影响。但是，当 DUT B 的 V-GS 从 0 V 变化到 -5 V 时，浪涌能力增加了 71.4%。第三象限的 I-V 特性是在不同 V-GS 下测量的。结果发现，在 V-GS = 0 V 时，当 DUT A 的源极-漏极电压 >2.5 V、DUT B >1.5 V 时，通道处于开路状态。高温测量也在 298 K 至 448 K 范围内进行。当 V-GS = 0 V 时，DUT B 在 10 A 源极-漏极电流下，通道电流高达 50%，而 DUT A 仅为 10%。这可能会导致高电流。 DUT B 通道中的电流/热密度。瞬态电阻也从浪涌 I-V 轨迹中提取，并且在 V-GS = 0 V 下测试的 DUT B 较高，这将增加耗散的浪涌能量。最后对失效机理进行了分析。对于 DUT A，铝熔化会导致 V-GS = -5 V 和 V-GS = 0 V 时发生故障。对于在 V-GS = 0 V 时测试的 DUT B，由于栅极氧化层故障，会发生较早的击穿。
In this work, third-quadrant I-V characterization and surge current tests are carried out on SiC asymmetric-trench MOSFET (DUT A) and SiC double-trench MOSFET (DUT B) under various gate-source biases (V-GS). The surge capability is found to be uninfluenced by V-GS for DUT A. However, it has a 71.4% increase when V-GS changes from 0 to -5 V for DUT B. The I-V characteristics in the third quadrant are measured under various V-GS. It is found that the channel is open when the source-drain voltage is >2.5 V for DUT A and >1.5 V for DUT B at V-GS = 0 V. High-temperature measurements are also conducted from 298 K to 448 K. When V-GS = 0 V, the channel current takes up to 50% at 10-A source-to-drain current for DUT B, whereas only 10% for DUT A. This could lead to high current/heat density in the channel of DUT B. The transient resistance is also extracted from the surge I-V trajectories, and it is higher for DUT B tested under V-GS = 0 V, which will increase the dissipated surge energy. Finally, the failure mechanism is analyzed. For DUT A, aluminum melting contributes to the failure at V-GS = -5 V and V-GS = 0 V. For DUT B tested at V-GS = 0 V, the earlier breakdown happens due to gate oxide failure.