Generation of single color centers by focused nitrogen implantation
Generation of single color centers by focused nitrogen implantation
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DOI：
10.1063/1.2103389
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发表时间：
2005-12-26
影响因子：
4
通讯作者：
Wrachtrup, J
中科院分区：
文献类型：
--
作者：
Meijer, J;Burchard, B;Wrachtrup, J
金刚石中的单缺陷中心是通过氮注入产生的。这些缺陷已通过单缺陷中心荧光显微镜进行了研究。光学和电子顺磁共振光谱明确表明所产生的缺陷是氮空位色心。对氮通量的分析以及氮空位中心数量的确定得出，每个缺陷中心平均需要注入 1 个 2 MeV 氮原子。 (c) 2005 年美国物理研究所。
Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An analysis of the nitrogen flux together with a determination of the number of nitrogen-vacancy centers yields that on average one 2 MeV nitrogen atom need to be implanted per defect center. (c) 2005 American Institute of Physics.