Raman spectroscopy of graphene on different substrates and influence of defects
Raman spectroscopy of graphene on different substrates and influence of defects
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DOI：
10.1007/s12034-008-0090-5
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发表时间：
2008-06-01
影响因子：
1.8
通讯作者：
Sood, A. K.
中科院分区：
文献类型：
--
作者：
Das, Anindya;Chakraborty, Biswanath;Sood, A. K.
我们展示了在不同的衬底，SiO2/Si和导电氧化铟锡（ITO）板上的石墨烯层的数量的拉曼光谱的演变。对于相同层数的石墨烯，G模峰位以及G带和2D带的强度比取决于样品的制备。二维拉曼谱带在单层和双层石墨烯中具有特征性的线形，捕获了它们电子结构的差异。缺陷对单层石墨烯的G带峰位置具有显著影响：频率显示出高达12 cm（-1）的蓝移，这取决于D拉曼带的强度，这是缺陷密度的标志。最令人惊讶的是，导电ITO板上的石墨烯的拉曼光谱显示G模式频率降低了约6 cm（-1），2D带频率降低了约20 cm（-1）。G和2D带的这种红移是在单层石墨烯中首次观察到的。
We show the evolution of Raman spectra with a number of graphene layers on different substrates, SiO2/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the preparation of sample for the same number of graphene layers. The 2D Raman band has characteristic line shapes in single and bilayer graphene, capturing the differences in their electronic structure. The defects have a significant influence on the G band peak position for the single layer graphene: the frequency shows a blue shift up to 12 cm(-1) depending on the intensity of the D Raman band, which is a marker of the defect density. Most surprisingly, Raman spectra of graphene on the conducting ITO plates show a lowering of the G mode frequency by similar to 6 cm(-1) and the 2D band frequency by similar to 20 cm(-1). This red-shift of the G and 2D bands is observed for the first time in single layer graphene.