Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy
Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy
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生长参数对分子束外延外延GaAs纳米线形貌和微结构的影响
DOI：
10.1016/j.jallcom.2013.05.007
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发表时间：
2013-12-15
影响因子：
6.2
通讯作者：
Lu, W.
中科院分区：
文献类型：
--
作者：
Lu, Z. Y.;Chen, P. P.;Lu, W.
采用Au辅助分子束外延技术，以GaAs（1 1 1）（B）为衬底，研究了As-4固体源生长温度和V/III流量比对GaAs纳米线形貌和微结构的影响。已经发现，400摄氏度的低生长温度可以产生具有类锯齿形态的无缺陷纤锌矿结构的纳米线，而具有更均匀直径的纳米线可以在具有许多堆垛层错的高温（500摄氏度和550摄氏度）下获得。研究还发现，在低V/III通量比下，GaAs纳米线具有收缩颈段，而高V/III通量比可能导致收缩颈段消失。对于Ga非常丰富的条件下，可以观察到的催化剂的相分离，留下一个小的Au-Ga液滴覆盖的外部纯Ga液滴。(C)2013爱思唯尔有限公司版权所有。
The effect of the growth temperature and V/III flux ratio on the morphology and microstructure of GaAs nanowires grown on GaAs (1 1 1)(B) substrates by Au-assisted molecular beam epitaxy with solid As-4 source was investigated. It has been found that a low growth temperature of 400 degrees C can result in defect-free wurtzite structured nanowire with syringe-like morphology, while nanowires with more homogeneous diameter can be obtained at high temperatures (500 degrees C and 550 degrees C) with many stacking faults. It was also found that, at a low V/III flux ratio, GaAs nanowires had a shrinking neck section, while a high V/III flux ratio may result in disappearance of the shrinking necking section. For the Ga very rich condition, a phase separation of the catalysts can be observed, leaving a small Au-Ga droplet covered by the outer pure Ga droplet. (C) 2013 Elsevier B.V. All rights reserved.