Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers
Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers
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DOI：
10.1116/1.3276774
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发表时间：
2010-01
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影响因子：
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通讯作者：
W. Lim;E. Douglas;D. Norton;S. Pearton;F. Ren;Y. Heo;S. Son;J. Yuh
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文献类型：
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作者：
W. Lim;E. Douglas;D. Norton;S. Pearton;F. Ren;Y. Heo;S. Son;J. Yuh
研究了SiOx钝化层对玻璃衬底上制备的底栅非晶（α-）InGaZnO 4薄膜晶体管（TFT）偏置稳定性的影响。在空气中对未钝化的TFT进行快速热退火改善了器件性能，与所制造的TFT相比，显示出更大的漏电流和场效应迁移率。未钝化和钝化器件的阈值电压（VTH）和亚阈值栅压摆幅（S）几乎不受低栅压应力（5V）的影响，但在相对较高的栅压应力（> 10 V）下，两者都受到强烈的影响。在1000 s的恒定栅压应力（+20 V）后，未钝化器件的正VTH和S偏移分别为1.8V和0.72Vdecade−1，钝化器件的正VTH和S偏移分别为1V和0.42Vdecade−1。这些结果表明，SiOx钝化层显著降低了TFT特性的偏移。
The authors investigated the effect of SiOx passivation layers on the bias stability of bottom gate amorphous (α-) InGaZnO4 thin film transistors (TFTs) fabricated on glass substrates. The use of rapid thermal annealing for unpassivated TFTs in air improved the device performance, showing larger drain current and field effect mobility compared to the as-fabricated TFTs. Threshold voltage (VTH) and subthreshold gate-voltage swing (S) for both unpassivated and passivated devices were found to be nearly independent of the low-gate-voltage stress (5V), but both were strongly affected under a relatively high-voltage stress (>10V). The positive VTH and S shifts after constant gate voltage stress (+20V) of 1000s were 1.8V and 0.72Vdecade−1 for the unpassivated devices and 1V and 0.42Vdecade−1 for the passivated devices, respectively. These results demonstrate that the SiOx passivation layer significantly reduced the shift in TFT’s characteristics.