Selective Area Control of Self-Assembled Pattern Architecture Using a Lithographically Patternable Block Copolymer
Selective Area Control of Self-Assembled Pattern Architecture Using a Lithographically Patternable Block Copolymer
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DOI：
10.1021/nn900343u
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发表时间：
2009-07-01
期刊：
影响因子：
17.1
通讯作者：
Obert, Christopher K.
中科院分区：
文献类型：
--
作者：
Bosworth, Joan K.;Black, Charles T.;Obert, Christopher K.
我们利用独特的化学性质的二嵌段共聚物聚（α-甲基苯乙烯）嵌段-聚（4-羟基苯乙烯），第一次创建两个不同的嵌段共聚物相形态的高分辨率选择性区域。将聚（α-甲基苯乙烯）-嵌段-聚（4-羟基苯乙烯）薄膜暴露于非选择性或嵌段选择性溶剂蒸气导致聚合物相分离和圆柱相或动力学捕获的球形相的图案的自组装。聚（4-羟基苯乙烯）在少量光酸产生剂和交联剂的存在下充当高分辨率负性光致抗蚀剂，在暴露于紫外光或电子束时经历辐射诱导交联。我们使用光刻曝光来锁定一个自组装相形态。在膜暴露于随后的溶剂蒸气之前，对宽度小至100 nm的样品区域进行取样，以在未暴露的晶片区域中形成第二自组装形态。
We leverage distinctive chemical properties of the diblock copolymer poly(alpha-methylstyrene)block-poly(4-hydroxystyrene) to create for the first time high-resolution selective-area regions of two different block copolymer phase morphologies. Exposure of thin films of poly(a-methylstyrene)-block-poly(4-hydroxystyrene) to nonselective or block-selective solvent vapors results in polymer phase separation and self-assembly of patterns of cylindrical-phase or kinetically trapped spherical-phases, respectively. Poly(4-hydroxystyrene) acts as a high-resolution negative-tone photoresist in the presence of small amounts of a photoacid generator and cross-linker, undergoing radiation-induced cross-linking upon exposure to ultraviolet light or an electron beam. We use lithographic exposure to lock one self-assembled phase morphology in specific. sample areas as small as 100 nm in width prior to film exposure to a subsequent solvent vapor to form a second self-assembled morphology in unexposed wafer areas.