Growth optimization of self-organized InSb/InAs quantum dots
Growth optimization of self-organized InSb/InAs quantum dots
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DOI：
10.1088/0022-3727/41/23/232003
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发表时间：
2008-12
期刊：
影响因子：
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通讯作者：
Q. Zhuang;P. Carrington;A. Krier
中科院分区：
文献类型：
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作者：
Q. Zhuang;P. Carrington;A. Krier
作者报告了通过分子束外延 (MBE) 优化 InSb/InAs 量子点 (QD) 的生长。通过原子力显微镜和光致发光（PL）研究了量子点的形貌和光学性质。我们观察到，无需退火阶段的迁移增强外延技术是生产高密度约 1.2 × 1010 点 cm−2 的高质量相干量子点的优越方法。在低温下，在接近 3.3 µm 的波长下观察到埋入式 InSb/InAs QD 的 PL 发射。此外，InAs盖层在较低温度下生长的样品的发射效率显着提高，这表明需要较低的生长温度来保持QD的良好性能，这是由于As/Sb交换的减少。
The authors report the growth optimization of InSb/InAs quantum dots (QDs) by molecular beam epitaxy (MBE). QDs morphology and optical properties were investigated by atomic force microscope and photoluminescence (PL). We observed that the migration enhanced epitaxy technique without the annealing stage is a superior method for producing high quality coherent QDs with a high density of ∼1.2 × 1010 dots cm−2. PL emission from buried InSb/InAs QDs was observed at low temperatures at a wavelength near 3.3 µm. In addition, the emission efficiency was dramatically improved for the samples where the InAs cap layer was grown at a lower temperature, indicating that low growth temperatures are required to maintain good properties of QDs which is due to reduced As/Sb exchange.