Formation of MoO x barrier layer under atmospheric based condition to control MoSe 2 formation in CIGS thin film solar cell
Formation of MoO x barrier layer under atmospheric based condition to control MoSe 2 formation in CIGS thin film solar cell
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在大气条件下形成MoO x 阻挡层以控制CIGS薄膜太阳能电池中MoSe 2 的形成
DOI：
10.1080/10667857.2018.1502512
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发表时间：
2018
影响因子：
3.1
通讯作者：
Ong K
中科院分区：
文献类型：
--
作者：
Ong K
作为器件制造过程的一部分，硒化步骤需要使CIGS吸收层结晶。然而，在高温硒化过程中，过量的mose2的形成会导致薄膜分层，对太阳能电池的电性能产生不利影响。本文提出了一种在大气条件下利用等离子体射流在Mo背触点之间形成氧化钼（MoOx）阻挡层的新方法。研究了MoOxcompound （moo2和MoO3）对器件效率的影响。事实证明，一层薄薄的moox势垒层能够有效地控制mose2的形成，并显著改善器件的电性能。功率转换效率为5.24%，且在冠军器件上的效率变化最小，这表明了该方法在小面积器件上的重要性。
As part of the device fabrication process, selenization step is required to crystallise the CIGS absorber layer. However, during high temperature selenization process, excessive formation of MoSe2can lead to delamination of the film and adverse effect on electrical properties of the solar cells. In this paper, a new method is proposed to form a Molybdenum Oxide (MoOx) barrier layer in between of the Mo back contact using plasma jet under atmospheric based conditions. The effect of MoOxcompound (MoO2and MoO3) towards the efficiency of the device is investigated. It has been proven that a thin layer of MoOxbarrier layer is able to control the formation of MoSe2effectively and provide a significant improvement in electrical properties of the devices. A power conversion efficiency of 5.24% with least efficiency variation across the champion device was achieved which demonstrates the importance of this methodology on small area devices.