Theory of tunneling magnetoresistance in granular magnetic films
Theory of tunneling magnetoresistance in granular magnetic films
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DOI：
10.1103/physrevb.53.r11927
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发表时间：
1996-05-01
影响因子：
3.7
通讯作者：
Maekawa, S
中科院分区：
文献类型：
--
作者：
Inoue, J;Maekawa, S
提出了最近在 Co-Al-O 颗粒磁性薄膜中观察到的大磁阻的机制。结果表明，电阻率随着施加磁场的增加而减小，因为随着晶粒之间磁化强度的相对方向变得平行，自旋相关的隧道效应增加。通过这种机制，我们能够解释磁阻对磁化强度和温度的依赖性。
A mechanism for the large magnetoresistance observed recently in Co-Al-O granular magnetic films is presented. It is shown that the resistivity decreases with increasing applied magnetic field because the spin-dependent tunneling increases as the relative orientation of the magnetization between grains becomes parallel. With this mechanism we are able to account for the dependence of the magnetoresistance on the magnetization and temperature.