Enhanced electromagnetic absorption properties of Fe-doped Sc2Si2O7 ceramics

Enhanced electromagnetic absorption properties of Fe-doped Sc2Si2O7 ceramics
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Fe掺杂Sc2Si2O7陶瓷的增强电磁吸收性能

DOI:
10.1016/j.ceramint.2020.10.011
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发表时间:
2020-10
影响因子:
5.2
通讯作者:
Laifei Cheng
Laifei Cheng
中科院分区:
材料科学1区
文献类型:
--
作者:
Hanjun Wei;Jimei Xue;Yujie Ma;Zexin Hou;Yongpeng Dong;Laifei Cheng

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在晶体中掺杂过渡金属元素会引起晶格结构的畸变和缺陷,从而改变电子结构和磁矩,从而调节材料的导电性和电磁性能。采用溶胶-凝胶法制备了Fe掺杂的Sc2 Si 2 O 7微波吸收陶瓷。在Ku波段(12.4-18 GHz)研究了Fe掺杂量对材料电磁(EM)和微波吸收性能的影响。正如预期的那样,介电和磁性能随着Fe含量的增加而显著改善。Fe掺杂引起缺陷和杂质能级,这分别增强极化损耗和电导损耗。Fe取代了ScO 6八面体结构中的Sc原子,产生了自旋磁矩的差异,从而增加了磁矩。此外,Fe和O原子的磁耦合发生在费米能级,这有利于磁损耗。特别地,当Fe含量为6%时,所制备的Fe掺杂的Sc2 Si 2 O 7陶瓷显示出吸收特性,其吸收峰位于14.5 GHz,最小反射损耗(RLmin)为-12.8 dB。因此,具有抗氧化和良好微波吸收性能的Fe掺杂Sc2 Si 2 O 7陶瓷在高温和水蒸气环境中具有较大的应用潜力。
Doping transition metal elements in a crystal causes distortion and defects in the lattice structure, which change the electronic structure and magnetic moment, thereby adjusting the electrical conductivity and electromagnetic properties of the material. Fe-doped Sc2Si2O7ceramics were synthesized using the sol-gel method for application to microwave absorption. The effect of Fe-doped content on the electromagnetic (EM) and microwave absorption properties was investigated in the Ku-band (12.4–18 GHz). As expected, the dielectric and magnetic properties improve substantially with increasing Fe content. Fe doping causes defects and impurity levels, which enhance polarization loss and conductance loss, respectively. Fe replaces Sc atoms in the ScO6octahedral structure, creating a difference in spin magnetic moments, which increases the magnetic moment. Moreover, the magnetic coupling of Fe and O atoms occurs at the Fermi level, which benefits magnetic loss. In particular, when the Fe content is 6%, the fabricated Fe-doped Sc2Si2O7ceramics show an absorption property with absorption peaks located at 14.5 GHz and a minimum reflection loss (RLmin) of −12.8 dB. Therefore, Fe-doped Sc2Si2O7ceramics with anti-oxidation and good microwave absorption performance have a greater potential for application in high-temperature and water-vapor environments.
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