6.2 210ke− Saturation signal 3µm-pixel variable-sensitivity global-shutter organic photoconductive image sensor for motion capture
6.2 210ke− Saturation signal 3µm-pixel variable-sensitivity global-shutter organic photoconductive image sensor for motion capture
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6.2 用于运动捕捉的210ke−饱和信号3μm像素可变灵敏度全局快门有机光电导图像传感器
DOI：
10.1109/isscc.2016.7417932
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Y. Inoue
中科院分区：
文献类型：
--
作者：
S. Shishido;Y. Miyake;Yoshiaki Sato;T. Tamaki;N. Shimasaki;Yoshihiro Sato;M. Murakami;Y. Inoue
用于机器视觉、车载摄像头和监控摄像头等应用的图像传感器需要全局快门 (GS) 功能。 GS 功能是一种日益强大的技术驱动力，不仅可以解决由卷帘快门失真或闪光带引起的成像问题，还可以用于传感应用 [1]。传统的具有GS功能的CMOS图像传感器（CIS）需要位于光电转换区域附近的存储[2-3]，而抑制kT/C噪声所需的两级传输像素结构需要两个存储节点和额外的晶体管。这使得在GS像素中很难同时缩小像素尺寸并放大饱和信号。
Image sensors for applications such as machine vision, in-vehicle cameras, and surveillance cameras require a global shutter (GS) function. GS functions are an increasingly powerful technology driver, not only for solving imaging problems caused by rolling shutter distortion or flash bands, but also for use in sensing applications [1]. Conventional CMOS image sensors (CIS) with GS functions require storage located near the photoelectric conversion area [2-3], and the two-stage transferring pixel structures required to suppress kT/C noise need two storage nodes and extra transistors. This makes it difficult, in GS pixels, to simultaneously shrink the pixel size and enlarge the saturation signal.