Wurtzite [11-20]-oriented AlFeN films prepared by RF sputtering
Wurtzite [11-20]-oriented AlFeN films prepared by RF sputtering
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DOI：
10.1063/1.5053147
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发表时间：
2018-11
期刊：
影响因子：
1.6
通讯作者：
N. Tatemizo;S. Imada;K. Nishio;T. Isshiki
中科院分区：
文献类型：
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作者：
N. Tatemizo;S. Imada;K. Nishio;T. Isshiki
我们在此报道了在重掺杂Fe（AlFeN）的AlN薄膜中高度的纤锌矿[11-20]取向。采用射频溅射法在SiO2玻璃和蓝宝石（0001）衬底上制备了AlFeN薄膜。X射线衍射测量结果表明，这些薄膜的择优取向的Fe浓度依赖。在高Fe浓度（10-26.1%）下，膜具有[11-20]取向，而Fe浓度小于5%的膜具有[0001]取向。这种趋势在蓝宝石（0001）衬底以及SiO2玻璃衬底上是明显的。当Fe含量为19.4%时，[11-20]取向度最高。[11-20]取向的AlFeN薄膜（Fe：19.4%）的透射电子显微镜观察表明，在与衬底的界面附近形成随机取向的晶核，随后，柱状晶粒选择性地以[11-20]取向生长。这些结果表明，AlFeN（11-20）薄膜可能可用作缓冲层，在各种衬底上生长非极性AlN。我们在本文中报道了重掺杂Fe（AlFeN）的AlN薄膜中高度的纤锌矿[11-20]取向。采用射频溅射法在SiO2玻璃和蓝宝石（0001）衬底上制备了AlFeN薄膜。X射线衍射测量结果表明，这些薄膜的择优取向的Fe浓度依赖。在高Fe浓度（10-26.1%）下，膜具有[11-20]取向，而Fe浓度小于5%的膜具有[0001]取向。这种趋势在蓝宝石（0001）衬底以及SiO2玻璃衬底上是明显的。当Fe含量为19.4%时，[11-20]取向度最高。[11-20]取向的AlFeN薄膜（Fe：19.4%）的透射电子显微镜观察表明，在与衬底的界面附近形成随机取向的晶核，随后，柱状晶粒选择性地以[11-20]取向生长。这些结果表明，AlFeN（11-20）薄膜可能是潜在的适用于作为缓冲层，在各种衬底上生长非极性AlN。
We report herein on a high degree of wurtzite [11-20] orientation in AlN films heavily doped with Fe (AlFeN). The AlFeN films were deposited by RF sputtering on SiO2 glass and sapphire (0001) substrates. X-ray diffraction measurements revealed the Fe concentration dependence of the preferred orientation of these films. At a high Fe concentration (10–26.1%), the films had a [11-20] orientation, whereas films with less than 5% of Fe had a [0001] orientation. This tendency was evident on sapphire (0001) substrate as well as on the SiO2 glass substrate. The highest degree of [11-20] orientation was achieved for 19.4% of Fe. Transmission electron microscopy observations of the [11-20]-oriented AlFeN films (Fe: 19.4%) showed that randomly oriented nuclei form near the interface with the substrate, and subsequently, columnar grains selectively grow with a [11-20] orientation. These results suggest that AlFeN (11-20) films may be potentially applicable as a buffer layer to grow non-polar AlN on various substrates.We report herein on a high degree of wurtzite [11-20] orientation in AlN films heavily doped with Fe (AlFeN). The AlFeN films were deposited by RF sputtering on SiO2 glass and sapphire (0001) substrates. X-ray diffraction measurements revealed the Fe concentration dependence of the preferred orientation of these films. At a high Fe concentration (10–26.1%), the films had a [11-20] orientation, whereas films with less than 5% of Fe had a [0001] orientation. This tendency was evident on sapphire (0001) substrate as well as on the SiO2 glass substrate. The highest degree of [11-20] orientation was achieved for 19.4% of Fe. Transmission electron microscopy observations of the [11-20]-oriented AlFeN films (Fe: 19.4%) showed that randomly oriented nuclei form near the interface with the substrate, and subsequently, columnar grains selectively grow with a [11-20] orientation. These results suggest that AlFeN (11-20) films may be potentially applicable as a buffer layer to grow non-polar AlN on various substrates.