Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth
Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth
复制标题
用于m面InGaN外延生长的最先进的m面独立式GaN衬底的卤化物气相外延生长的优点和遗留问题
DOI：
10.1088/0268-1242/27/2/024008
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发表时间：
2012
影响因子：
1.9
通讯作者：
and K. Fujito
中科院分区：
文献类型：
--
作者：
S. F. Chichibu;M. Kagaya;P. Corfdir;J. D. Ganiere;B. Deveaud-Pledran;N. Grandjean;S. Kubo;and K. Fujito
描述了利用卤化物气相外延（HVPE）生长m平面In x Ga 1−x N外延膜的最新m平面独立GaN （FS-GaN）衬底的优点和存在的问题。在200 ~ 250 nm厚的m面拟晶In x Ga 1−x N （x≤0.14）薄膜中，由于具有较低的穿线位错和基面层错密度，提高了量子效率，缩短了辐射寿命。x射线ω-摇摆曲线的半最大值全宽度值保持不变，基底值为80和60弧秒
Advantages and remaining issues of state-of-the-art m-plane freestanding GaN (FS-GaN) substrates grown by halide vapor phase epitaxy (HVPE) for m-plane In x Ga 1− x N epitaxial film growth by metalorganic vapor phase epitaxy are described. Because of the low threading dislocation and basal-plane stacking fault densities, improved quantum efficiency and short radiative lifetime are achieved for the near-band-edge emission of 200–250 nm thick m-plane pseudomorphic In x Ga 1− x N (x⩽ 0.14) epilayers. Values of full-width at half-maximum for the x-ray ω-rocking curves remain unchanged as the substrate values being 80 and 60 arcsec for the (10