Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1∕3Nb2∕3)O3–PbTiO3 films grown on (100)cSrRuO3‖(100)SrTiO3 substrates by metal-organic chemical vapor deposition
Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1∕3Nb2∕3)O3–PbTiO3 films grown on (100)cSrRuO3‖(100)SrTiO3 substrates by metal-organic chemical vapor deposition
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DOI:
10.1063/1.2337391
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发表时间:
2006-09
影响因子:
3.2
通讯作者:
S. Yokoyama;S. Okamoto;H. Funakubo;T. Iijima;K. Saito;H. Okino;Takashi Yamamoto;K. Nishida
中科院分区:
文献类型:
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作者:
S. Yokoyama;S. Okamoto;H. Funakubo;T. Iijima;K. Saito;H. Okino;Takashi Yamamoto;K. Nishida
Relaxor-type ferroelectric (1−x)Pb(Mg1∕3Nb2∕3)O3–xPbTiO3 (PMN-PT) films, 2–3μm in thickness, with a PbTiO3 content (x) ranging from 0 to 1 were grown on (100)cSrRuO3‖(100)SrTiO3 substrates at 650°C by metal-organic chemical vapor deposition. The effects the x value had on the crystal structure, dielectric and ferroelectric properties, and mechanical response of these films were systematically investigated. Epitaxial growth having (100)∕(001) orientation irrespective of x and the constituent phase change with x were ascertained from both x-ray diffraction reciprocal space mapping analysis and Raman spectroscopy. The constituent phase changed from a rhombohedral (pseudocubic) single phase, a mixture phase of rhombohedral (pseudocubic) and tetragonal phases, and a tetragonal single phase, with increasing x. The mixed phase region was found to exist at x=0.40–0.55, which was different from that reported for single crystals (x=0.31–0.35). The dependencies of relative dielectric constant and remanent polarizati...