Electrical properties and reliability of MOSFET's with rapid thermal NO-nitrided SiO/sub 2/ gate dielectrics
Electrical properties and reliability of MOSFET's with rapid thermal NO-nitrided SiO/sub 2/ gate dielectrics
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采用快速热 NO 氮化 SiO/sub 2/ 栅极电介质的 MOSFET 的电气特性和可靠性
DOI：
10.1109/16.381987
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
D. Kwong
中科院分区：
文献类型：
--
作者：
M. Bhat;D. Wristers;Liang;Jiang Yan;H. J. Fulford;D. Kwong
本文报道了在纯一氧化氮（NO）环境中，用快速热氮化（RTN）热生长SiO/sub 2/制备的N沟和P沟氮氧化物栅MOSFET的性能和热载流子可靠性。结果表明，N沟MOSFET的电流驱动能力随着SiO/sub 2/的NO氮化而提高。高场电子迁移率的显着增强也观察到增加NO-氮化。对于低V/sub g/和高V/sub g/，与SiO/sub 2/相比，具有NO氮化SiO/sub 2/栅极的P沟道MOSFET的电流驱动能力和空穴迁移率稍低。具有NO氮化氧化物的N沟道和P沟道MOSFET对沟道热载流子退化表现出优异的免疫力。热载流子可靠性的改善归因于通过NO氮化在电介质中有效地掺入氮。一个1000/spl度/C，短10秒NO退火被认为是最佳的氮化条件，因为相比，控制氧化物器件，这些设备显示出相当的电子和空穴迁移率，但显着增强热载流子免疫力。>
This paper reports on the performance and hot carrier reliability of N- and P-channel MOSFET's with oxynitride gate dielectrics fabricated by rapid thermal nitridation (RTN) of thermally grown SiO/sub 2/ in pure nitric oxide (NO) ambient. It is found that current drivability of N-channel MOSFET's increases with NO-nitridation of SiO/sub 2/. A significant enhancement in high field electron mobility is also observed with increasing NO-nitridation. P-channel MOSFET's with NO-nitrided SiO/sub 2/ gates show somewhat lower current drivability and hole mobility compared to SiO/sub 2/ for both low- and high-V/sub g/. Both N- and P-channel MOSFET's with NO-nitrided oxides show excellent immunity to channel hot carrier degradation. The improvement in hot-carrier reliability is attributed to the efficient incorporation of nitrogen in the dielectric through NO-nitridation. A 1000/spl deg/C, short 10-second NO-anneal was found to be the optimum nitridation condition since, compared to control oxide devices, these devices showed comparable electron and hole mobility but significantly enhanced hot-carrier immunity. >