Synthesis, crystal structure and photoluminescence of (Ba0.99Eu0.01)Al3Si4N9
Synthesis, crystal structure and photoluminescence of (Ba0.99Eu0.01)Al3Si4N9
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DOI：
10.1016/j.jssc.2015.04.046
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发表时间：
2015-08
影响因子：
3.3
通讯作者：
H. Yamane;Fumitaka Yoshimura
中科院分区：
文献类型：
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作者：
H. Yamane;Fumitaka Yoshimura
由二元氮化物粉末在2000℃和0.85 Mpa的氮气气氛下混合加热合成的(Ba0.99Eu0.01)Al3Si4N9样品得到了(Ba0.99Eu0.01)Al3Si4N9晶体。某些颗粒的电子衍射和X射线衍射的基波反射可以用正交晶胞参数表示：a=10.028(2)；b=53.353(9)；c=5.9215(11)；在X射线衍射仪和X射线衍射仪照片上观察到沿层错的条纹和漫射线，表明存在层错。利用空间群pFdd2的基本反射强度数据分析了统计平均结构。提出了基于平均结构的局部结构模型。在另一种颗粒的X射线衍射振荡照片中也观察到了类似的条纹和漫射线，其基波反射由单斜晶胞参数指示：a=5.8376(4)；b=26.6895(12)；c=5.8393(3)；和β=5.8393(15)°。在400 nm激发下，具有正交和单斜晶系基本结构的颗粒混合物发出峰值波长为500 nm、半高全宽为65 nm的蓝绿光。在300℃下测得的发射强度是在25℃下测得的强度的67.5%，宽激发带的范围约为260~475 nm，最大强度在290 nm左右，其中60%的强度是通过400℃的激发获得的。
Crystalline grains of (Ba0.99Eu0.01)Al3Si4N9were obtained from samples synthesized by heating mixtures of binary nitride powders at 2000 °C and 0.85 MPa of N2gas. The fundamental reflections of electron diffraction (ED) and X-ray diffraction (XRD) measured for some grains could be indexed with orthorhombic cell parameters:a=10.028(2) Å,b=53.353(9) Å, andc=5.9215(11) Å. Streaks and diffuse lines along thebaxis were observed in the ED and XRD photographs, indicating stacking faults. A statistical average structure was analyzed using the intensity data of the fundamental reflections with the space groupFdd2. Local structure models were presented based on the average structure. Similar streaks and diffuse lines with fundamental reflections indexed with monoclinic cell parameters:a=5.8376(4) Å,b=26.6895(12) Å,c=5.8393(3) Å, andβ=118.8428(15)° were also observed in the XRD oscillation photographs of another grain. The mixture of the grains having the orthorhombic and monoclinic fundamental structures emitted blue–green light with a peak wavelength of 500 nm and a full width at half-maximum (FWHM) of 65 nm under 400 nm excitation. The emission intensity measured at 300 °C was 67.5% of the intensity measured at 25 °C. A broad excitation band ranged from about 260 nm to 475 nm with maximum intensity at around 290 nm, and 60% of the intensity was obtained by excitation at 400 nm.