Transport and mobility properties of wurtzite InN and GaN
Transport and mobility properties of wurtzite InN and GaN
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DOI：
10.1002/pssb.200642433
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发表时间：
2007-10
期刊：
影响因子：
--
通讯作者：
Zeki Yarar
中科院分区：
文献类型：
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作者：
Zeki Yarar
采用Monte Carlo系综模型计算了纤锌矿结构氮化镓（GaN）和氮化铟（InN）晶体中电子输运特性。InN的材料参数存在争议，因此，最近报道的InN和传统上接受的参数值用于模拟和结果进行了比较。分析了稳态和瞬态电子输运特性，并确定了电子的谷群作为电场的函数。电子的低场迁移率也作为温度的函数和在宽范围的载流子浓度下获得。可以看出，与最近公布的材料参数的载流子在InN中的峰值速度显着增加，而在其获得的字段减少。计算出的最大低场迁移率在300 K的InN与最近的材料参数为约10000 cm 2/V s的低载流子浓度。（© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
The results of an ensemble Monte Carlo model of the electron transport in wurtzite gallium nitride (GaN) and indium nitride (InN) are presented. There is a controversy over the material parameters of InN, therefore the recently reported and the traditionally accepted parameter values for InN are used in simulations and the results are compared. The steady‐state and transient electron transport characteristics are analyzed and the valley populations of electrons are determined as a function of electric field. The low‐field mobility of electrons is also obtained as a function of temperature and over a wide range of carrier concentrations. It is seen that with the recently published material parameters the peak velocity of carriers in InN increases significantly, while the field at which it is attained decreases. The calculated maximum low field mobility at 300 K in InN with the recent material parameters is about 10000 cm2/V s for low carrier concentrations. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)