Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma
Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma
复制标题
氧等离子体中聚(环己烯碳酸酯)的反应离子蚀刻
DOI:
10.1016/j.mee.2018.01.017
复制
发表时间:
2018-05-05
影响因子:
2.3
通讯作者:
Wang, Zheyao
中科院分区:
文献类型:
--
作者:
Xue, Xingjun;Zhou, Kun;Wang, Zheyao
This paper reports reactive ion etching (RIE) of poly (cyclohexene carbonate) (PCC), a thermal decomposable polymer that can be used as a sacrificial material for fabrication of embedded micro cavities and channels. The dependence of etching rate and anisotropy on RF power, chamber pressure, and O-2 flow rate has been investigated. Experimental results show that all these parameters have influences on etching rate and anisotropy, and RF power and chamber pressure are, respectively, the two dominant factors that affect etching rate and anisotropy. Etching rate can be increased at high RF power, optimal chamber pressure and optimal O-2 flow rate. Etching anisotropy can be improved by using high RF power, low chamber pressure, and low O-2 flow rate. (C) 2018 Elsevier B.V. All rights reserved.