Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma

Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma
复制标题

氧等离子体中聚(环己烯碳酸酯)的反应离子蚀刻

DOI:
10.1016/j.mee.2018.01.017
复制
发表时间:
2018-05-05
影响因子:
2.3
通讯作者:
Wang, Zheyao
Wang, Zheyao
中科院分区:
工程技术3区
文献类型:
--
作者:
Xue, Xingjun;Zhou, Kun;Wang, Zheyao

文献摘要

被引文献

相似文献

本文报道了反应离子刻蚀(RIE)的聚碳酸环己烯酯(PCC),热分解聚合物,可用作牺牲材料的嵌入式微腔和通道的制造。刻蚀速率和各向异性的RF功率,腔室压力,和O-2流量的依赖关系进行了研究。实验结果表明,这些参数对刻蚀速率和各向异性都有影响,其中射频功率和腔室气压分别是影响刻蚀速率和各向异性的两个主要因素。在高RF功率、最佳腔室压力和最佳O-2流速下,可以增加蚀刻速率。蚀刻各向异性可以通过使用高RF功率、低腔室压力和低O-2流速来改善。(C)2018爱思唯尔B. V.保留所有权利。
This paper reports reactive ion etching (RIE) of poly (cyclohexene carbonate) (PCC), a thermal decomposable polymer that can be used as a sacrificial material for fabrication of embedded micro cavities and channels. The dependence of etching rate and anisotropy on RF power, chamber pressure, and O-2 flow rate has been investigated. Experimental results show that all these parameters have influences on etching rate and anisotropy, and RF power and chamber pressure are, respectively, the two dominant factors that affect etching rate and anisotropy. Etching rate can be increased at high RF power, optimal chamber pressure and optimal O-2 flow rate. Etching anisotropy can be improved by using high RF power, low chamber pressure, and low O-2 flow rate. (C) 2018 Elsevier B.V. All rights reserved.