High performance IGZO-based phototransistors by BN/BP interface engineering
High performance IGZO-based phototransistors by BN/BP interface engineering
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采用 BN/BP 界面工程的高性能 IGZO 光电晶体管
DOI：
10.1088/1361-6528/abba59
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发表时间：
2021-01-08
期刊：
影响因子：
3.5
通讯作者：
Xiao, Shaoqing
中科院分区：
文献类型：
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作者：
Li, Daqing;Nan, Haiyan;Xiao, Shaoqing
近年来，在开发由铟镓锌氧化物（a-IGZO）薄膜和二维范德华材料组成的异质结用于光电应用方面取得了一些进展，然而，通过构建这种异质结来改善IGZO通道本身的报道很少。在此，我们报道了通过引入氮化硼(BN)/黑磷（BP）界面工程，IGZO光电晶体管器件的光响应性能得到了巨大的改善。通过在IGZO和BP之间创建适当的带弯曲和光生载流子传输路径，可以显著抑制IGZO通道中光生载流子的重组。因此，在447 nm波长处，相应的光响应度可以从0.05 a W−1提高到0.3 a W−1。BN/BP修饰的IGZO光电晶体管的最大外量子效率为83.4%。结果表明，这种通过二维材料的界面工程可以作为高性能氧化物半导体光电器件的一般途径。
Some advances have been achieved in developing heterojunctions consisting of indium-gallium-zinc oxide (a-IGZO) films and two dimensional (2D) van der Waals materials for optoelectronic applications in recent years, however, the improvement of IGZO channel itself via constructing such heterojunctions is rarely reported. Here, we report the huge improvement in photoresponse performances for the IGZO phototransistor devices by introducing boron nitride (BN)/black phosphorus (BP) interface engineering. By creating an appropriate band bending and an efficient photo-generated carrier transfer path between IGZO and BP, the recombination of the photo-generated carriers in the IGZO channel is significantly suppressed. As a result, the corresponding photoresponsivity at a wavelength of 447 nm can be promoted from 0.05 A W−1 to 0.3 A W−1. A corresponding maximum external quantum efficiency of 83.4% was obtained for the BN/BP decorated IGZO phototransistor. The results imply that such interface engineering via 2D materials can be used as a general route to high performance oxide-semiconductor based optoelectronic devices.