Electrical spin injection from ferromagnet into an InAs quantum well through a MgO tunnel barrier
Electrical spin injection from ferromagnet into an InAs quantum well through a MgO tunnel barrier
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DOI：
10.7567/apex.7.073001
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发表时间：
2013-04
影响因子：
2.3
通讯作者：
T. Ishikura;Lenanrt-Knud Liefeith;Z. Cui;K. Konishi;K. Yoh;T. Uemura
中科院分区：
文献类型：
--
作者：
T. Ishikura;Lenanrt-Knud Liefeith;Z. Cui;K. Konishi;K. Yoh;T. Uemura
研究了Ni81Fe19 （NiFe）通过MgO隧穿势垒注入InAs量子阱的电自旋注入技术在基于InAs的自旋场效应晶体管中的潜在应用。在NiFe和InAs之间插入2nm厚的MgO隧道势垒比没有MgO势垒的情况下增加了两个数量级的结电阻。具有MgO势垒的样品在1.4 K时显示出明显的非局部自旋阀信号，可能是由于减轻了阻抗不匹配问题。估计的自旋极化为8.1%，高于文献中报道的NiFe/InGaAs肖特基结。
The electrical spin injection from Ni81Fe19 (NiFe) into an InAs quantum well through a MgO tunneling barrier has been investigated for potential application to an InAs-based spin field-effect transistor. The insertion of a 2-nm-thick MgO tunnel barrier between NiFe and InAs increased the junction resistance by two orders of magnitude compared with that without a MgO barrier. The sample with a MgO barrier showed a clear nonlocal spin-valve signal at 1.4 K, possibly due to the alleviation of the impedance mismatching problem. The estimated spin polarization was 8.1%, which is higher than any reported in the literature for a NiFe/InGaAs Schottky junction.