Effects of electron temperature in high‐density Cl2 plasma for precise etching processes
Effects of electron temperature in high‐density Cl2 plasma for precise etching processes
复制标题
高密度 Cl2 等离子体中电子温度对精密蚀刻工艺的影响
DOI：
10.1063/1.116929
复制
发表时间：
1996
影响因子：
4
通讯作者：
T. Tsukada
中科院分区：
文献类型：
--
作者：
S. Samukawa;T. Tsukada
利用射频偏频超高频（UHF）和其他传统等离子体（电子回旋共振等离子体、电感耦合等离子体、表面波等离子体）对硅的蚀刻特性进行了研究。当提供600 kHz射频偏置时，通过降低电子温度可以显著提高硅蚀刻速率及其模式依赖性。特别是，使用超高频等离子体可以实现高速率和无微负载的硅沟槽刻蚀。认为超高频等离子体中由于电子温度极低而产生了大量的负离子。低频偏置加速了负离子和正离子交替到达衬底表面。因此，低频偏置超高频等离子体减少了衬底上的电荷积累。
Silicon etching characteristics are investigated by using radio‐frequency (rf) biased ultrahigh frequency (UHF) and other conventional plasmas (electron cycotron resonance plasma, inductive coupled plasma, surface wave plasma) determined by using a Cl2 etchant. The silicon etching rate and its pattern dependence are significantly improved by decreasing the electron temperature when supplying a 600‐kHz rf bias. In particular, use of the UHF plasma allows high‐rate and microloading‐free silicon trench etching. It is suggested that a larger number of negative ions are generated in the UHF plasma because of the extremely low electron temperature. The low‐frequency bias accelerates the negative and positive ions alternately to the substrate surface. As a result, the low‐frequency biased UHF plasma reduces the charge accumulation on the substrate.