Nanoscale phase separation in ultrafast pulsed laser deposited arsenic trisulfide (As2S3) films and its effect on plasma etching
Nanoscale phase separation in ultrafast pulsed laser deposited arsenic trisulfide (As2S3) films and its effect on plasma etching
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DOI：
10.1063/1.2798936
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发表时间：
2007-10-15
影响因子：
3.2
通讯作者：
Luther-Davies, Barry
中科院分区：
文献类型：
--
作者：
Choi, Duk-Yong;Madden, Steve;Luther-Davies, Barry
我们已经观察到纳米级的相分离，在非晶三硫化二砷（As 2S 3）的薄膜产生的超快脉冲激光沉积和等离子体刻蚀后的膜的表面形貌的影响。当在CF 4-O-2等离子体中蚀刻膜时，在表面上观察到颗粒状结构。从拉曼和X射线光电子能谱，我们得出结论，蚀刻表面的颗粒状结构来自不同的化学侵蚀之间的膜中的不同阶段。(C)2007年，美国物理学会。
We have observed nanoscale phase separation in amorphous arsenic trisulfide (As2S3) films produced by ultrafast pulsed laser deposition and its effect on the surface morphology of the film after plasma etching. When the film was etched in CF4-O-2 plasma, a grainy structure was observed on the surface. From Raman and x-ray photoelectron spectroscopies, we concluded that the grainy structure of the etched surfaces comes from the differential chemical attack between different phases in the film. (C) 2007 American Institute of Physics.