TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY FOR THE TWO-DIMENSIONAL ELECTRON-GAS - ANALYTICAL RESULTS FOR LOW-TEMPERATURES
TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY FOR THE TWO-DIMENSIONAL ELECTRON-GAS - ANALYTICAL RESULTS FOR LOW-TEMPERATURES
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DOI：
10.1103/physrevb.33.1076
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发表时间：
1986-01-15
影响因子：
3.7
通讯作者：
DOLGOPOLOV, VT
中科院分区：
文献类型：
--
作者：
GOLD, A;DOLGOPOLOV, VT
本文给出了二维电子气低温静态电导率的解析结果。电导率表示为σ（T）= σ（0）[1-C（α，n）T/Δ F-D（α，n）（T/Δ F）3/2+ O（T2）]。给出了杂质散射和表面粗糙度散射情况下σ（0）的解析表达式。C（α，n）和D（α，n）是普适函数，依赖于通过C（α）的散射势和通过C（n）的电子密度n的q 2 α依赖性。结果表明，零温下的能量依赖电导率在费米能处具有奇异性。我们的结果进行了比较与其他理论结果和实验中的Si-MOS（金属氧化物半导体）系统。
We present analytical results for the static conductivity of the two-dimensional electron gas at low temperature. The conductivity is expressed as σ (T)= σ (0)[1-C (α, n) T/ɛ F-D (α, n)(T/ɛ F) 3/2+ O (T 2)]. Analytical expressions for σ (0) in the case of impurity and surface roughness scattering are given. C (α, n) and D (α, n) are universal functions, depending on the q 2 α dependence of the scattering potential via C (α) and the density n of electrons via C (n). It is shown that the energy-dependent conductivity at temperature zero has a singularity at the Fermi energy. Our results are compared with other theoretical results and with experiments in Si-MOS (metal-oxide-semiconductor) systems.