Ion-beam-induced crystal grain nucleation in amorphous silicon carbide
Ion-beam-induced crystal grain nucleation in amorphous silicon carbide
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DOI：
10.1016/s0168-583x(99)00937-4
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发表时间：
2000-03-01
影响因子：
1.3
通讯作者：
Skorupa, W
中科院分区：
文献类型：
--
作者：
Höfgen, A;Heera, V;Skorupa, W
采用离子束诱导晶化法（IBIC）在6 H-SiC块体晶体的非晶化区制备纳米晶。在300摄氏度至700摄氏度的温度下，高剂量Al注入刺激了沉淀。利用横截面透射电子显微镜（XTEM）和掠入射下的X射线衍射（XRD），纳米晶相的形态及其依赖于注入参数进行了研究。IBIC后的再结晶材料的形态完全不同于热结晶后的形态。Al注入过程中形成了3C-SiC颗粒，其平均直径在5 ~ 20 nm之间，呈近球形，无规则取向。发现再结晶开始的临界离子剂量约为1.9 × 10 ~（16）Al ~+/cm ~（2）。(C)2000 Elsevier Science B. V.保留所有权利。
Ion-beam-induced crystallization (IBIC) was used to produce nanocrystals in the preamorphized region of a 6H-SiC bulk crystal. The precipitation was stimulated by high dose Al implantation at temperatures from 300 degrees C to 700 degrees C. Using cross-sectional transmission electron microscopy (XTEM) and X-ray diffraction (XRD) under grazing incidence, the morphology of the nanocrystalline phase and its dependence on the implantation parameters were investigated. After IBIC the morphology of the recrystallized material completely differs from that after thermal crystallization. Randomly oriented grains of 3C-SiC with almost spherical shape and mean diameters ranging from 5 to 20 nm are formed during Al implantation. A critical ion dose for the onset of the recrystallization is found at about 1.9x10(16) Al+/cm(2). (C) 2000 Elsevier Science B.V. All rights reserved.