Polarization switching and induced birefringence in InGaAsP multiple quantum wells at 1.5 μm
Polarization switching and induced birefringence in InGaAsP multiple quantum wells at 1.5 μm
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DOI：
10.1063/1.1429794
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发表时间：
2002-03
影响因子：
3.2
通讯作者：
D. Marshall;M. Mazilu;A. Miller;C. Button
中科院分区：
文献类型：
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作者：
D. Marshall;M. Mazilu;A. Miller;C. Button
我们基于 InGaAsP 多量子阱中的电子自旋动力学分析了室温偏振开关的 1.5μm 波长操作。在泵浦探针测量中，发现左右圆偏振泵浦光的响应出现意想不到的差异，并确定这是由过量载流子引起的双折射引起的。瞬态偏振旋转和椭圆率作为时间延迟的函数进行测量。
We analyze the 1.5μm wavelength operation of a room temperature polarization switch based on electron spin dynamics in InGaAsP multiple quantum wells. An unexpected difference in response for left and right circularly polarized pump light in pump–probe measurements was discovered and determined to be caused by an excess carrier induced birefringence. Transient polarization rotation and ellipticity were measured as a function of time delay.