Redefinition the quasi-Fermi energy levels separation of electrons and holes inside and outside quantum wells of GaN based multi-quantumwell semiconductor laser diodes
Redefinition the quasi-Fermi energy levels separation of electrons and holes inside and outside quantum wells of GaN based multi-quantumwell semiconductor laser diodes
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重新定义GaN基多量子阱半导体激光二极管量子阱内外电子和空穴的准费米能级分离
DOI：
10.1088/1361-6463/ab6a37
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Cunda Wang
中科院分区：
文献类型：
--
作者：
Ding Li;Liefeng Feng;Wei Yang;Xiufang Yang;Xiaodong Hu;Cunda Wang
精确的实验和使用近abc或从头算方法的自洽理论模拟都揭示了氮化镓基激光器结电压（V j）的异常变化（Li et al . 2013 Appl.）。理论物理。中国生物医学工程学报（英文版），2018。D::。中国科学院学报（自然科学版），51 (095102)；理论物理。B 124 39)。在这里，进一步精确的发射光谱特征和基于GaN的激光二极管（ld）的带隙模拟证实，以前的研究人员可能混淆了结电压（V j）和两个费米能级的电子和空穴之间的分离，这些电子和空穴在有源区被电子电荷（ΔE f/e）所划分。对于多量子阱（mqw），它们之间有明显的区别。对于理想的gan基ld，尽管结电压增加，MQW区域中电子和空穴两个费米能级之间的分离以及光净增益等物理量在阈值区域之外保持不变，但阈值区域不可预测地急剧增加。
Both accurate experiments and a self-consistent theoretical simulation using the near-ABC or ab initio method have uncovered the anomalous changes in the junction voltage (V j) of GaN-based lasers (Li et al 2013 Appl. Phys. Lett. 102 123501, Feng et al 2018 J. Phys. D: Appl. Phys. 51 095102 and Feng et al Appl. Phys. B 124 39). Here, further accurate emission spectral characteristics and band-gap simulation of a GaN based laser diodes (LDs) confirmed that previous researchers may have confused the junction voltage (V j) and the separation between the two Fermi levels of electrons and holes in the active region divided by the electronic charge (ΔE f/e). For the multiple-quantum wells (MQWs), there are obvious differences between them. For an ideal GaN-based LDs, despite the increase in junction voltage, physical quantities including the separation between the two Fermi levels of electrons and holes in the MQW region, and the optical net gain remain unchanged beyond the threshold region after an unpredictable sharp increase in the threshold region.