A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN
A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN
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透射电子显微镜研究 Ti/Al 与 n-GaN 欧姆接触随退火温度升高的微观结构演变
DOI:
10.1007/s11664-001-0030-2
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发表时间:
2001
影响因子:
2.1
通讯作者:
R. Davies
中科院分区:
文献类型:
--
作者:
A. Bright;D. Tricker;C. Humphreys;R. Davies